# Physics of Semiconductor Devices (Φ-572)

## Alexandros Georgakilas

This is a postgraduate level course. The successful completion of the course will provide the student with: • • • • |

**Φ-572. Physics of Semiconductor DevicesHours: 6ΕCTS: 6**

**Lectures:**

Monday 11:00-13:00, Αίθουσα 4 (Fermi)

Thursday 14:00-16:00, Αίθουσα Σεμιναρίων 1ου Ορόφου

Friday 14:00-16:00, Αίθουσα Σεμιναρίων 1ου Ορόφου

This is a postgraduate level course. The successful completion of the course will provide the student with: • • • • |

This is a postgraduate level course. The successful completion of the course will provide the student with: • • • • |

##### Syllabus

**Course Syllabus**

The syllabus covers the following topics: 1. Introduction to the physics of semiconductors : Main semiconductor materials, crystal structure, energy bands, effective mass, free electron and hole, energy band diagram, distribution and concentrations of carriers at thermal equilibrium, generation-recombination, drift and diffusion currents, quasi-Fermi levels, continuity equations, minority carrier diffusion equations. 2. PN junction diode : Abrupt and linear junctions, electrostatic description, C-V and I-V equations for the ideal diode, deviations from ideal behavior. 3. Bipolar junction transistor (BJT) : Terminology, symbols and regions of operation, I-V equations for the ideal transistor, I-V equations including recombination in the base, additional deviations from the ideal transistor, Ebers-Moll equations. 4. Semiconductor heterojunction: Band discontinuities based on electron affinity, energy band diagram, analytical electrostatic description of pn heterojunction, brief insight into the application of voltage and conduction. 5. Metal-semiconductor junction : Energy band diagram of ideal junction, rectifying contact (Schottky barrier diode), electrostatic description, Schottky effect, basic I-V relation, thermionic emission theory, diffusion theory, tunneling currents, experimental determination of barrier height and built-in voltage, effect of surface states, ohmic contacts. 6. Metal-insulator-semiconductor junction : The ideal metal-oxide-silicon (MOS) junction, bias on the MOS, the different states of the surface region of the semiconductor, capacitance-voltage behavior, flat-band voltage, threshold voltage and density of charge in the inversion layer, effect of oxide and interface charges, MOS memories, Charge-Coupled Devices (CCDs). 7. MOS Field Effect Transistor (MOSFET) : MOSFET types, long channel drain current equation, bulk-charge effect, body-bias effect, subthreshold conduction, small-signal circuit model, transconductance, drain current in short-channel MOSFET, short-channel effects, determination of MOSFET parameters. 8. Brief introduction to FETs with gate consisting of a pn junction (JFET) or a Schottky diode (MESFET). |

**BIBLIOGRAPHY**

*TEXTBOOKS*

*«Advanced Semiconductor Fundamentals»*, 2nd edition, R. F. Pierret, Modular Series on Solid State Devices vol. VI, Pearson, 2003*«Device Electronics for Integrated Circuits»*, R.S. Muller & T.I. Kamins, 3rd edition, Wiley, 2002*«The PN Junction Diode»*, 2nd edition, G. W. Neudeck, Modular Series on Solid State Devices vol. II, Addison-Wesley, 1989*«The Bipolar junction Transistor»*, 2nd edition, G. W. Neudeck, Modular Series on Solid State Devices v. III, Addison-Wesley, 1989*«Physics of Semiconductor Devices»*, 3^{rd}edition, S. M. Sze and K. K. Ng, Wiley, 2007*«Physics of Semiconductor Devices»*, M. Shur, Prentice Hall, 1990

*GENERAL INFORMATION WEBSITES*

*https://spectrum.ieee.org/**https://irds.ieee.org/**https://en.wikipedia.org/wiki/International_Technology_Roadmap_for_Semiconductors**https://www.semiconductor-today.com/**https://compoundsemiconductor.net**https://www.eetimes.com*